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switchmode ? npn bipolar power transistor for switching power supply applications the mje/MJF18004 have an applications specific stateoftheart die designed for use in 220 v line operated switchmode power supplies and electronic light ballasts. this high voltage/high speed transistors offer the following: ? improved efficiency due to low base drive requirements: high and flat dc current gain h fe fast switching no coil required in base circuit for turnoff (no current tail) ? full characterization at 125 c ? on semiconductor six sigma philosophy provides tight and reproducible parametric distributions ? two package choices: standard to220 or isolated to220 ? MJF18004, case 221d, is ul recognized at 3500 v rms : file #e69369 ???????????????????????? ???????????????????????? maximum ratings ????????????? ????????????? rating ??? ??? symbol ????? ????? mje18004 ???? ???? MJF18004 ??? ??? unit ????????????? ????????????? collectoremitter sustaining voltage ??? ??? v ceo ???????? ???????? 450 ??? ??? vdc ????????????? ????????????? collectoremitter breakdown voltage ??? ??? v ces ???????? ???????? 1000 ??? ??? vdc ????????????? ????????????? emitterbase voltage ??? ??? v ebo ???????? ???????? 9.0 ??? ??? vdc ????????????? ????????????? collector current e continuous e peak(1) ??? ??? i c i cm ???????? ???????? 5.0 10 ??? ??? adc ????????????? ? ??????????? ? ????????????? base current e continuous e peak(1) ??? ? ? ? ??? i b i bm ???????? ? ?????? ? ???????? 2.0 4.0 ??? ? ? ? ??? adc ????????????? ? ??????????? ? ? ??????????? ? ????????????? rms isolation voltage(2) test no. 1 per fig. 22a (for 1 sec, r.h. test no. 2 per fig. 22b < 30%, t a = 25 c) test no. 3 per fig. 22c ??? ? ? ? ? ? ? ??? v isol ????? ? ??? ? ? ??? ? ????? e e e ???? ? ?? ? ? ?? ? ???? 4500 3500 1500 ??? ? ? ? ? ? ? ??? volts ????????????? ????????????? total device dissipation (t c = 25 c) derate above 25 c ??? ??? p d ????? ????? 75 0.6 ???? ???? 35 0.28 ??? ??? watts w/ c ????????????? ????????????? operating and storage temperature ??? ??? t j , t stg ???????? ???????? 65 to 150 ??? ??? c ???????????????????????? ???????????????????????? thermal characteristics ????????????? ????????????? rating ??? ??? symbol ????? ????? mje18004 ???? ???? MJF18004 ??? ??? unit ????????????? ????????????? thermal resistance e junction to case e junction to ambient ??? ??? r q jc r q ja ????? ????? 1.65 62.5 ???? ???? 3.55 62.5 ??? ??? c/w ????????????? ? ??????????? ? ????????????? maximum lead temperature for soldering purposes: 1/8 from case for 5 seconds ??? ? ? ? ??? t l ???????? ? ?????? ? ???????? 260 ??? ? ? ? ??? c preferred devices are on semiconductor recommended choices for future use and best overall value. on semiconductor ? semiconductor components industries, llc, 2002 april, 2002 rev. 6 1 publication order number: mje18004/d mje18004 MJF18004 power transistor 5.0 amperes 1000 volts 35 and 75 watts *on semiconductor preferred device * * case 221a09 to220ab mje18004 case 221d02 isolated to220 type MJF18004 style 1: pin 1. base 2. collector 3. emitter 4. collector 1 2 3 4 1 2 3 style 2: pin 1. base 2. collector 3. emitter
mje18004 MJF18004 http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise specified) ??????????????????? ??????????????????? characteristic ????? ????? symbol ???? ???? min ??? ??? typ ???? ???? max ??? ??? unit ????????????????????????????????? ????????????????????????????????? off characteristics ??????????????????? ??????????????????? collectoremitter sustaining voltage (i c = 100 ma, l = 25 mh) ????? ????? v ceo(sus) ???? ???? 450 ??? ??? e ???? ???? e ??? ??? vdc ??????????????????? ??????????????????? collector cutoff current (v ce = rated v ceo , i b = 0) ????? ????? i ceo ???? ???? e ??? ??? e ???? ???? 100 ??? ??? m adc ??????????????????? ? ????????????????? ? ??????????????????? collector cutoff current (v ce = rated v ces , v eb = 0) (t c = 25 c) (t c = 125 c) collector cutoff current (v ce = 800 v, v eb = 0) (t c = 125 c) ????? ? ??? ? ????? i ces ???? ? ?? ? ???? e e e ??? ? ? ? ??? e e e ???? ? ?? ? ???? 100 500 100 ??? ? ? ? ??? m adc ??????????????????? ??????????????????? emitter cutoff current (v eb = 9.0 vdc, i c = 0) ????? ????? i ebo ???? ???? e ??? ??? e ???? ???? 100 ??? ??? m adc ????????????????????????????????? ????????????????????????????????? on characteristics ??????????????????? ??????????????????? baseemitter saturation voltage (i c = 1.0 adc, i b = 0.1 adc) baseemitter saturation voltage (i c = 2.0 adc, i b = 0.4 adc) ????? ????? v be(sat) ??? ??? e e ???? ???? 0.82 0.92 ???? ???? 1.1 1.25 ??? ??? vdc ???????????????? ? ?????????????? ? ? ?????????????? ? ? ?????????????? ? ? ?????????????? ? ???????????????? collectoremitter saturation voltage (i c = 1.0 adc, i b = 0.1 adc) (i c = 2.0 adc, i b = 0.4 adc) (i c = 2.5 adc, i b = 0.5 adc) ???? ? ?? ? ? ?? ? ? ?? ? ? ?? ? ???? (t c = 125 c) (t c = 125 c) ????? ? ??? ? ? ??? ? ? ??? ? ? ??? ? ????? v ce(sat) ??? ? ? ? ? ? ? ? ? ? ? ? ? ??? e e e e e ???? ? ?? ? ? ?? ? ? ?? ? ? ?? ? ???? 0.25 0.29 0.3 0.36 0.5 ???? ? ?? ? ? ?? ? ? ?? ? ? ?? ? ???? 0.5 0.6 0.45 0.8 0.75 ??? ? ? ? ? ? ? ? ? ? ? ? ? ??? vdc ???????????????? ? ?????????????? ? ? ?????????????? ? ? ?????????????? ? ? ?????????????? ? ???????????????? dc current gain (i c = 1.0 adc, v ce = 2.5 vdc) dc current gain (i c = 0.3 adc, v ce = 5.0 vdc) dc current gain (i c = 2.0 adc, v ce = 1.0 vdc) dc current gain (i c = 10 madc, v ce = 5.0 vdc) ???? ? ?? ? ? ?? ? ? ?? ? ? ?? ? ???? (t c = 125 c) (t c = 125 c) (t c = 125 c) ????? ? ??? ? ? ??? ? ? ??? ? ? ??? ? ????? h fe ??? ? ? ? ? ? ? ? ? ? ? ? ? ??? 12 e 14 e 6.0 e 10 ???? ? ?? ? ? ?? ? ? ?? ? ? ?? ? ???? 21 20 e 32 11 7.5 22 ???? ? ?? ? ? ?? ? ? ?? ? ? ?? ? ???? e e 34 e e e e ??? ? ? ? ? ? ? ? ? ? ? ? ? ??? e ????????????????????????????????? dynamic characteristics ??????????????????? ??????????????????? current gain bandwidth (i c = 0.5 adc, v ce = 10 vdc, f = 1.0 mhz) ????? ????? f t ??? ??? e ???? ???? 13 ???? ???? e ??? ??? mhz ??????????????????? ??????????????????? output capacitance (v cb = 10 vdc, i e = 0, f = 1.0 mhz) ????? ????? c ob ??? ??? e ???? ???? 50 ???? ???? 65 ??? ??? pf ??????????????????? ??????????????????? input capacitance (v eb = 8.0 v) ????? ????? c ib ??? ??? e ???? ???? 800 ???? ???? 1000 ??? ??? pf ????????? ? ??????? ? ????????? dynamic saturation voltage: determined 1 0 m s and ????? ? ??? ? ????? (i c = 1.0 adc i b1 = 100 madc ???? ? ?? ? ???? 1.0 m s ???? ? ?? ? ???? (t c = 125 c) ????? ? ??? ? ????? v ce(dsat) ??? ? ? ? ??? e e ???? ? ?? ? ???? 6.8 14 ???? ? ?? ? ???? e e ??? ? ? ? ??? vdc ????????? ? ??????? ? ????????? determined 1.0 m s and 3.0 m s respectively after rising i b1 reaches 90% of ????? ? ??? ? ????? i b1 = 100 madc v cc = 300 v) ???? ? ?? ? ???? 3.0 m s ???? ? ?? ? ???? (t c = 125 c) ????? ? ??? ? ????? ??? ? ? ? ??? e e ???? ? ?? ? ???? 2.4 5.6 ???? ? ?? ? ???? e e ??? ? ? ? ??? ????????? ? ??????? ? ????????? rising i b1 reaches 90% of final i b1 (see figure 18) ????? ? ??? ? ????? (i c = 2.0 adc i b1 = 400 madc ???? ? ?? ? ???? 1.0 m s ???? ? ?? ? ???? (t c = 125 c) ????? ? ??? ? ????? ??? ? ? ? ??? e e ???? ? ?? ? ???? 11.3 15.5 ???? ? ?? ? ???? e e ??? ? ? ? ??? ????????? ????????? ????? ????? i b1 = 400 madc v cc = 300 v) ???? ???? 3.0 m s ???? ???? (t c = 125 c) ????? ????? ??? ??? e e ???? ???? 1.3 6.1 ???? ???? e e ??? ??? (1) pulse test: pulse width = 5.0 ms, duty cycle 10%. (continued) (2) proper strike and creepage distance must be provided.
mje18004 MJF18004 http://onsemi.com 3 ????????????????????????????????? ? ??????????????????????????????? ? ????????????????????????????????? electrical characteristics e continued (t c = 25 c unless otherwise specified) ??????????????????? ??????????????????? characteristic ????? ????? symbol ??? ??? min ???? ???? typ ???? ???? max ??? ??? unit ????????????????????????????????? ????????????????????????????????? switching characteristics: resistive load (d.c. 10%, pulse width = 20 m s) ???????? ? ?????? ? ???????? turnon time ????????? ? ??????? ? ????????? (i c = 1.0 adc, i b1 = 0.1 adc, i b2 = 0.5 adc, v cc = 300 v) ???? ? ?? ? ???? (t c = 125 c) ????? ? ??? ? ????? t on ??? ? ? ? ??? e e ???? ? ?? ? ???? 210 180 ???? ? ?? ? ???? 300 e ??? ? ? ? ??? ns ???????? ? ?????? ? ???????? turnoff time ????????? ? ??????? ? ????????? ???? ? ?? ? ???? (t c = 125 c) ????? ? ??? ? ????? t off ??? ? ? ? ??? e e ???? ? ?? ? ???? 1.0 1.3 ???? ? ?? ? ???? 1.7 e ??? ? ? ? ??? m s ???????? ???????? turnon time ????????? ????????? (i c = 2.0 adc, i b1 = 0.4 adc, i b1 = 1.0 adc, v cc = 300 v) ???? ???? (t c = 125 c) ????? ????? t on ??? ??? e e ???? ???? 75 90 ???? ???? 110 e ??? ??? ns ???????? ? ?????? ? ???????? turnoff time ????????? ? ??????? ? ????????? ???? ? ?? ? ???? (t c = 125 c) ????? ? ??? ? ????? t off ??? ? ? ? ??? e e ???? ? ?? ? ???? 1.5 1.8 ???? ? ?? ? ???? 2.5 e ??? ? ? ? ??? m s ???????? ? ?????? ? ???????? turnon time ????????? ? ??????? ? ????????? (i c = 2.5 adc, i b1 = 0.5 adc, i b2 = 0.5 adc, v cc = 250 v) ???? ? ?? ? ???? (t c = 125 c) ????? ? ??? ? ????? t on ??? ? ? ? ??? e e ???? ? ?? ? ???? 450 900 ???? ? ?? ? ???? 800 1400 ??? ? ? ? ??? ns ???????? ???????? storage time ????????? ????????? ???? ???? (t c = 125 c) ????? ????? t s ??? ??? e e ???? ???? 2.0 2.2 ???? ???? 3.0 3.5 ??? ??? m s ???????? ? ?????? ? ???????? fall time ????????? ? ??????? ? ????????? ???? ? ?? ? ???? (t c = 125 c) ????? ? ??? ? ????? t f ??? ? ? ? ??? e e ???? ? ?? ? ???? 275 500 ???? ? ?? ? ???? 400 800 ??? ? ? ? ??? ns ????????????????????????????????? ????????????????????????????????? switching characteristics: inductive load (v clamp = 300 v, v cc = 15 v, l = 200 m h) ???????? ? ?????? ? ???????? fall time ????????? ? ??????? ? ????????? (i c = 1.0 adc, i b1 = 0.1 adc, i b2 = 0.5 adc) ???? ? ?? ? ???? (t c = 125 c) ????? ? ??? ? ????? t fi ??? ? ? ? ??? e e ???? ? ?? ? ???? 100 100 ???? ? ?? ? ???? 150 e ??? ? ? ? ??? ns ???????? ???????? storage time ????????? ????????? ???? ???? (t c = 125 c) ????? ????? t si ??? ??? e e ???? ???? 1.1 1.4 ???? ???? 1.7 e ??? ??? m s ???????? ? ?????? ? ???????? crossover time ????????? ? ??????? ? ????????? ???? ? ?? ? ???? (t c = 125 c) ????? ? ??? ? ????? t c ??? ? ? ? ??? e e ???? ? ?? ? ???? 180 160 ???? ? ?? ? ???? 250 e ??? ? ? ? ??? ns ???????? ? ?????? ? ???????? fall time ????????? ? ??????? ? ????????? (i c = 2.0 adc, i b1 = 0.4 adc, i b2 = 1.0 adc) ???? ? ?? ? ???? (t c = 125 c) ????? ? ??? ? ????? t fi ??? ? ? ? ??? e e ???? ? ?? ? ???? 90 150 ???? ? ?? ? ???? 175 e ??? ? ? ? ??? ns ???????? ???????? storage time ????????? ????????? ???? ???? (t c = 125 c) ????? ????? t si ??? ??? e e ???? ???? 1.7 2.2 ???? ???? 2.5 e ??? ??? m s ???????? ? ?????? ? ???????? crossover time ????????? ? ??????? ? ????????? ???? ? ?? ? ???? (t c = 125 c) ????? ? ??? ? ????? t c ??? ? ? ? ??? e e ???? ? ?? ? ???? 180 250 ???? ? ?? ? ???? 300 e ??? ? ? ? ??? ns ???????? ? ?????? ? ???????? fall time ????????? ? ??????? ? ????????? (i c = 2.5 adc, i b1 = 0.5 adc, i b2 = 0.5 adc, v (ff) 5 0 vdc) ???? ? ?? ? ???? (t c = 125 c) ????? ? ??? ? ????? t fi ??? ? ? ? ??? e e ???? ? ?? ? ???? 70 100 ???? ? ?? ? ???? 130 175 ??? ? ? ? ??? ns ???????? ???????? storage time ????????? ????????? v be(off) = 5.0 vdc) ???? ???? (t c = 125 c) ????? ????? t si ??? ??? e e ???? ???? 0.75 1.0 ???? ???? 1.0 1.3 ??? ??? m s ???????? ? ?????? ? ???????? crossover time ????????? ? ??????? ? ????????? ???? ? ?? ? ???? (t c = 125 c) ????? ? ??? ? ????? t c ??? ? ? ? ??? e e ???? ? ?? ? ???? 250 250 ???? ? ?? ? ???? 350 500 ??? ? ? ? ??? ns
mje18004 MJF18004 http://onsemi.com 4 h fe , dc current gain i c , collector current (amps) 0.01 100 i c , collector current (amps) figure 1. dc current gain @ 1 volt h fe , dc current gain figure 2. dc current gain @ 5 volts v ce , voltage (volts) figure 3. collector saturation region figure 4. collectoremitter saturation voltage figure 5. baseemitter saturation region figure 6. capacitance 10 1 1.00 10.00 100 10 1 0.01 0.10 1.00 10.00 2.0 0.01 i b , base current (amps) 10.00 1.00 0.01 0.01 i c, collector current (amps) 0.10 1.1 1.0 0.8 0.4 0.01 i c , collector current (amps) 0.10 1.00 10.00 1000 100 1 v ce , collector-emitter voltage (volts) 1 100 1.0 0 0.10 1.00 10.00 10000 10 0.10 0.10 1.00 10.00 10 v ce , voltage (volts) v be , voltage (volts) 0.9 0.6 0.5 0.5 1.5 0.7 c, capacitance (pf) typical static characteristics v ce = 1 v t j = 125 c t j = 25 c t j = -20 c v ce = 5 v t j = 125 c t j = -20 c t j = 25 c t j = 25 c i c = 0.5 a 1 a 1.5 a 2 a 3 a 4 a t j = 25 c t j = 125 c i c /i b = 10 i c /i b = 5 t j = 25 c t j = 125 c i c /i b = 10 i c /i b = 5 c ib c ob t j = 25 c f = 1 mhz
mje18004 MJF18004 http://onsemi.com 5 figure 7. resistive switching, t on figure 8. resistive switching, t off i c , collector current (amps) i c collector current (amps) i c , collector current (amps) 0 1800 i c , collector current (amps) t, time (ns) figure 9. inductive storage time, t si figure 10. inductive storage time, t si (h fe ) figure 11. inductive switching, t c and t fi , i c /i b = 5 figure 12. inductive switching, t c and t fi , i c /i b = 10 1000 4 2000 0 3500 3 h fe , forced gain 6 300 50 0 i c , collector current (amps) 45 150 0 2000 0 12 15 250 100 2 25 t si , storage time (ns) 200 150 100 400 4 2 500 1000 1500 2500 t, time (ns) t, time (ns) 034 1000 1500 2500 9 3500 500 1000 1500 2000 2500 023 t, time (ns) 45 023 t, time (ns) 1350 35 500 3000 4 5 7 8 10 11 13 14 250 50 3000 1 1 11 3000 200 600 800 1200 1400 1600 0 200 typical switching characteristics (i b2 = i c /2 for all switching) i b(off) = i c /2 v cc = 300 v pw = 20 m s i c /i b = 10 i c /i b = 5 i c /i b = 5 i c /i b = 10 t j = 25 c t j = 125 c i b(off) = i c /2 v cc = 300 v pw = 20 m s i c /i b = 5 i c /i b = 10 t j = 25 c t j = 125 c t j = 25 c t j = 125 c v z = 300 v v cc = 15 v i b(off) = i c /2 l c = 200 m h t j = 25 c t j = 125 c v z = 300 v v cc = 15 v i b(off) = i c /2 l c = 200 m h i c = 2 a i c = 1 a t j = 25 c t j = 125 c v z = 300 v v cc = 15 v i b(off) = i c /2 l c = 200 m h t fi t c t j = 25 c t j = 125 c v z = 300 v v cc = 15 v i b(off) = i c /2 l c = 200 m h t c t fi
mje18004 MJF18004 http://onsemi.com 6 0.1 figure 13. inductive fall time figure 14. inductive crossover time figure 15. forward bias safe operating area power derating factor figure 16. reverse bias safe operating area figure 17. forward bias power derating there are two limitations on the power handling ability of a tran- sistor: average junction temperature and second breakdown. safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 15 is based on t c = 25 c; t j (pk) is variable depending on power level. second breakdown pulse limits are valid for duty cycles to 10% but must be derated when t c 25 c. second break- down limitations do not derate the same as thermal limitations. allowable current at the voltages shown on figure 15 may be found at any case temperature by using the appropriate curve on figure 17. t j (pk) may be calculated from the data in figures 20 and 21. at any case temperatures, thermal limitations will reduce the power that can be handled to values less the limitations imposed by second breakdown. for inductive loads, high voltage and current must be sustained simultaneously during turnoff with the basetoemitter junction reverse biased. the safe level is specified as a reverse biased safe operating area (figure 16). this rating is verified under clamped conditions so that the device is never subjected to an ava- lanche mode. h fe , forced gain h fe , forced gain t fi , fall time (ns) t c , crossover time (ns) i c , collector current (amps) i c , collector current (amps) v ce , collector-emitter voltage (volts) v ce , collector-emitter voltage (volts) t c , case temperature ( c) guaranteed safe operating area information 3 6 12 15 9 70 4 5 7 8 10 11 13 14 3 6 12 15 50 4 5 13 14 10 1000 100 0.01 400 600 110 0 900 0 500 800 700 1000 80 90 100 110 120 130 140 150 160 200 300 150 100 250 1.0 10 100 1.0 2.0 3.0 4.0 5.0 6.0 9 78 1011 typical switching characteristics (i b2 = i c /2 for all switching) 1.0 0.8 0.6 0.4 0.2 0 160 140 120 100 80 60 40 20 i c = 2 a i c = 1 a t j = 25 c t j = 125 c v z = 300 v v cc = 15 v i b(off) = i c /2 l c = 200 m h v z = 300 v v cc = 15 v i b(off) = i c /2 l c = 200 m h i c = 1 a i c = 2 a t j = 25 c t j = 125 c 1 m s 10 m s 50 m s 1ms 5ms dc (mje18004) dc (MJF18004) extended soa t c 125 c i c /i b 4 l c = 500 m h v be(off) = 0 v -1.5 v -5 v second breakdown derating thermal derating
mje18004 MJF18004 http://onsemi.com 7 -5 -4 -3 -2 -1 0 1 2 3 4 5 012345678 figure 18. dynamic saturation voltage measurements time v ce volts i b figure 19. inductive switching measurements 1 m s 3 m s 90% i b dyn 1 m s dyn 3 m s 10 9 8 7 6 5 4 3 2 1 0 012 34567 8 time i b i c t si v clamp 10% v clamp 90% i b 1 10% i c t c 90% i c t fi table 1. inductive load switching drive circuit +15 v 1 m f 150 w 3 w 100 w 3 w mpf930 +10 v 50 w common -v off 500 m f mpf930 mtp8p10 mur105 mje210 mtp12n10 mtp8p10 150 w 3 w 100 m f i out a 1 m f i c peak v ce peak v ce i b i b 1 i b 2 v(br)ceo(sus) l = 10 mh rb2 = v cc = 20 volts i c (pk) = 100 ma inductive switching l = 200 m h rb2 = 0 v cc = 15 volts rb1 selected for desired i b 1 rbsoa l = 500 m h rb2 = 0 v cc = 15 volts rb1 selected for desired i b 1 r b2 r b1
mje18004 MJF18004 http://onsemi.com 8 r q jc (t) = r(t) r q jc r q jc = 3.12 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) r q jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 r q jc (t) = r(t) r q jc r q jc = 1.25 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) r q jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 0.01 t, time (ms) figure 20. typical thermal response (z q jc(t) ) for mje18004 r(t), transient thermal resistance (normalized) 0.2 d = 0.5 single pulse 0.01 0.10 1.00 10.00 100.00 100000 0.10 1.00 0.01 t, time (ms) figure 21. typical thermal response for MJF18004 r(t), transient thermal resistance (normalized) 0.2 0.1 0.01 0.10 1.00 10.00 100.00 1000 0.10 1.00 0.02 0.05 1000 10000 0.1 0.05 0.02 single pulse d = 0.5 typical thermal response
mje18004 MJF18004 http://onsemi.com 9 mounted fully isolated package leads heatsink 0.110 min figure 22a. screw or clip mounting position for isolation test number 1 *measurement made between leads and heatsink with all leads shorted together clip mounted fully isolated package leads heatsink clip 0.107 min mounted fully isolated package leads heatsink 0.107 min figure 22b. clip mounting position for isolation test number 2 figure 22c. screw mounting position for isolation test number 3 test conditions for isolation tests* 4-40 screw plain washer heatsink compression washer nut clip heatsink laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. the compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions. destructive laboratory tests show that using a hex head 440 screw, without washers, and applying a torque in excess of 20 i n . lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability. additional tests on slotted 440 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the package. however, in order to positively ensure the package integrity of the fully isolated device, on semiconductor does not recom- mend exceeding 10 in . lbs of mounting torque under any mounting conditions. figure 23. typical mounting techniques for isolated package figure 23a. screwmounted figure 23b. clipmounted mounting information** ** for more information about mounting power semiconductors see application note an1040.
mje18004 MJF18004 http://onsemi.com 10 package dimensions case 221a09 issue aa to220ab notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane t c s t u r j style 1: pin 1. base 2. collector 3. emitter 4. collector
mje18004 MJF18004 http://onsemi.com 11 package dimensions notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. style 2: pin 1. base 2. collector 3. emitter dim a min max min max millimeters 0.621 0.629 15.78 15.97 inches b 0.394 0.402 10.01 10.21 c 0.181 0.189 4.60 4.80 d 0.026 0.034 0.67 0.86 f 0.121 0.129 3.08 3.27 g 0.100 bsc 2.54 bsc h 0.123 0.129 3.13 3.27 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.14 1.52 n 0.200 bsc 5.08 bsc q 0.126 0.134 3.21 3.40 r 0.107 0.111 2.72 2.81 s 0.096 0.104 2.44 2.64 u 0.259 0.267 6.58 6.78 b y g n d l k h a f q 3 pl 123 m b m 0.25 (0.010) y seating plane t u c s j r case 221d02 (isolated to220 type) ul recognized: file #e69369 issue d
mje18004 MJF18004 http://onsemi.com 12 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indem nify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and re asonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employ er. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mje18004/d switchmode is a trademark of semiconductor components industries, llc. literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada

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